Structural integrity and damage of ZrB2 ceramics after 4 MeV Au ions irradiation

نویسندگان

چکیده

Ultra-high temperature ceramics have been considered as good candidates for plasma facing materials due to their combination of high melting point, strength and hardness, thermal conductivity well chemical inertness. In this study, zirconium diboride has chosen investigate its irradiation damage behavior. Irradiated by 4 MeV Au2+ with a total fluence 2.5 × 1016 cm?2, ceramic shows substantial resilience irradiation-induced structural integrity maintained but mild at lattice level. Grazing incident X-ray diffraction evidences no change the hexagonal structure in irradiated region parameter increased c decreased, giving volume shrinkage ?0.46%. Density functional theory calculation that such corresponds non-stoichiometric compound ZrB1.97. Electron energy-loss spectroscopy transmission electron microscope revealed an increase valence electrons zirconium, suggesting boron vacancies were indeed developed irradiation. Along depth, long dislocations observed inside top layer depth ?750 nm where implanted Au ions reached peak concentration. Underneath layer, density Frank is formed cascade collision down 1150 nm. All features show potential ZrB2 be used material nuclear system.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

STRAIN/DAMAGE IN CRYSTALLINE MATERIALS BOMBARDED BY MeV IONS: RECRYSTALLIZATION OF GaAs BY HIGH-DOSE IRRADIATION

MeV ion irradiation effects on semiconductor crystals, GaAs(lOO) and Si (111) and on an insulating crystal CaF 2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs <1go> ~aturates to a certain level after a high dose irrad...

متن کامل

Dosimetric comparison of 4 MeV and 6 MeV electron beams for total skin irradiation

BACKGROUND In this study, dosimetric aspects of TSEI consisting of a 4 MeV beam with no spoiler were investigated in comparison to a nominal 6 MeV beam with spoiler, and the potential for clinical applications was evaluated. METHODS The TSEI technique is based on the Stanford technique, which utilizes a beam configuration of six-dual fields. MOSFETs were used to measure the optimal gantry ang...

متن کامل

Analysis of chromatin integrity and DNA damage of buffalo spermatozoa

This study was conducted to determine chromatin integrity and DNA damage by DNA electrophoresis and comet assays of buffalo fresh and frozen semen. Semen samples were collected from four buffalo bulls and evaluated after freezing for semen motility, viability, sperm abnormalities, chromatin integrity and DNA damage. A significant variation was found in semen parameters after thawing. Highly sig...

متن کامل

Phase Formation in Ion Beam Bombarded Al–Au Multilayers using High-current 2.0 MeV 4He‘ Ions

High-current ion beam bombardment (IBB) was performed to interdi†use Al–Au multilayers produced by evaporation on Ñat substrates of carbon, silicon and gold (typical thickness of each layer 150 nm, packages consist of 2 and 2.5 periods). During IBB with 2 MeV 4He‘ ions, the Al–Au interdi†usion was measured simultaneously with Rutherford backscattering (RBS). A complete mixing of the multilayers...

متن کامل

Oxygen defects created in CeO2 irradiated with 200 MeV Au ions

CeO2 films were irradiated with 200 MeV Au ions in order to investigate the damages created by electronic energy deposition. In the Raman spectra of the ion-irradiated films, a broad band appears at the higher frequency side of the F2g peak of CeO2. The band intensity increases as ion fluence increases. Furthermore, the F2g peak becomes asymmetric with a low frequency tail. In order to understa...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Materials Science & Technology

سال: 2021

ISSN: ['1941-1162', '1005-0302']

DOI: https://doi.org/10.1016/j.jmst.2020.09.019